Method for manufacturing semiconductor package structure

ABSTRACT

A method for manufacturing a semiconductor package structure is provided. The method includes: (a) providing a semiconductor structure including a first device and a second device; (b) irradiating the first device by a first energy-beam with a first irradiation area; and (c) irradiating the first device and the second device by a second energy-beam with a second irradiation area greater than the first irradiation area of the first energy-beam.

BACKGROUND

1. Field of the Disclosure

The present disclosure relates to a method for manufacturing asemiconductor package structure, and in particularly to a method byusing energy-beams to form bonding joints.

2. Description of the Related Art

Based on laser's quick heating property, laser assisted bonding (LAB)has been used to replace a conventional reflow process to melt bumps,solder balls, pads and/or other electrical connecting elements toachieve the purpose of fine pitch flip chip bonding. However, due todifferent thermal conductivity of different materials, LAB may be proneto damaging materials, such as epoxy molding compound or a substrate. Inorder to solve aforementioned problems, a new method for manufacturing asemiconductor package structure is required.

SUMMARY

In some embodiments, a method for manufacturing a semiconductor packagestructure includes: (a) providing a semiconductor structure including afirst device and a second device; (b) irradiating the first device by afirst energy-beam with a first irradiation area; and (c) irradiating thefirst device and the second device by a second energy-beam with a secondirradiation area greater than the first irradiation area of the firstenergy-beam.

In some embodiments, a method for manufacturing a semiconductor packagestructure includes: (a) providing a substrate, a first device and asecond device, wherein the first device and the second device aredisposed on the substrate; (b) heating the first device by a firstenergy-beam with a first power; and (c) heating the first device and thesecond device by a second energy-beam with a second power, wherein thesecond power is greater than the first power.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of some embodiments of the present disclosure are readilyunderstood from the following detailed description when read with theaccompanying figures. It is noted that various structures may not bedrawn to scale, and dimensions of the various structures may bearbitrarily increased or reduced for clarity of discussion.

FIG. 1 illustrates a cross-sectional view of an example of asemiconductor structure according to some embodiments of the presentdisclosure.

FIGS. 2A, 2B, 2C and 2D illustrate top views of various stages of amethod for manufacturing a semiconductor package structure according tosome embodiments of the present disclosure.

FIG. 3 is the simulation result of temperatures of a device and apackage body in each step shown in FIGS. 2A, 2B, 2C and 2D.

FIG. 4 illustrates a cross-sectional view of an example of asemiconductor structure according to some embodiments of the presentdisclosure.

FIGS. 5A, 5B and 5C illustrate top views of various stages of a methodfor manufacturing a semiconductor package structure according to someembodiments of the present disclosure.

FIGS. 6A, 6B and 6C illustrate cross-sectional views of the method formanufacturing the semiconductor package structure corresponding to FIGS.5A, 5B and 5C, respectively.

DETAILED DESCRIPTION

Common reference numerals are used throughout the drawings and thedetailed description to indicate the same or similar components.Embodiments of the present disclosure will be readily understood fromthe following detailed description taken in conjunction with theaccompanying drawings.

The following disclosure provides for many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to explain certain aspects of the present disclosure. These are,of course, merely examples and are not intended to be limiting. Forexample, the formation of a first feature over or on a second feature inthe description that follows may include embodiments in which the firstand second features are formed or disposed in direct contact, and mayalso include embodiments in which additional features may be formed ordisposed between the first and second features, such that the first andsecond features may not be in direct contact. In addition, the presentdisclosure may repeat reference numerals and/or letters in the variousexamples. This repetition is for the purpose of simplicity and clarityand does not in itself dictate a relationship between the variousembodiments and/or configurations discussed.

FIG. 1 illustrates a cross-sectional view of an example of asemiconductor structure 1 according to some embodiments of the presentdisclosure.

In some embodiments, the semiconductor structure 1 may include asubstrate 10, a device 21, a device 22, a package body 30, a conductivestructure 40 r, electrical connectors 41, 42 and 43.

The substrate 10 may include, for example, a semiconductor substrate, aninsulating core substrate, a printed circuit board or other suitablesubstrates. The semiconductor substrate may include a bulksemiconductor, a semiconductor-on-insulator (SOI) substrate, or thelike. The insulating core substrate may include, a fiberglass reinforcedresin core (e.g., FR4), a Prepreg (PP), Ajinomoto build-up film (ABF), aphoto-sensitive material or other suitable materials. The printedcircuit board may include, for example, a paper-based copper foillaminate, a composite copper foil laminate, or a polymer-impregnatedglass-fiber-based copper foil laminate. The substrate 10 may includeredistribution layer(s) (RDLs) lOr or traces for electrical connection.

The device 21 and the device 22 may be disposed on the substrate 10. Thedevice 21 and/or the device 22 may include, for example, an activedevice, such as a semiconductor die or a chip. The device 21 and/or thedevice 22 may include a logic die (e.g., system on a chip (SoC), centralprocessing unit (CPU), graphics processing unit (GPU), applicationprocessor (AP), microcontroller, etc.), a memory die (e.g., dynamicrandom access memory (DRAM) die, static random access memory (SRAM) die,etc.), a power management die (e.g., power management integrated circuit(PMIC) die), a radio frequency (RF) die, a sensor die, amicro-electro-mechanical-system (MEMS) die, a signal processing die(e.g., digital signal processing (DSP) die), a front-end die (e.g.,analog front-end (AFE) dies), or combinations thereof.

The device 21 and/or the device 22 may include a substrate (e.g., asilicon substrate) and circuit(s) embedded therein. In some embodiments,the device 21 and the device 22 may be disposed side-by-side. In someembodiments, the device 21 and the device 22 may be disposedside-by-side and coupled to a same surface of the substrate 10. In someembodiments, the device 21 may be in contact with the device 22. Forexample, the lateral surface of the device 21 may be in contact with thelateral surface of the device 22. In other some embodiments, the device21 may be separated from the device 22. For example, the lateral surfaceof the device 21 may be separated from the lateral surface of the device22, and there is a gap between them.

The package body 30 may be disposed on the substrate 10. In someembodiments, the package body 30 may surround the device 21 and thedevice 22. In some embodiments, the package body 30 may surround andcover the lateral surfaces of the device 21 and the device 22. Thepackage body 30 may be made of molding material that may include, forexample, a Novolac-based resin, an epoxy-based resin, a silicone-basedresin, or other another suitable encapsulant. Suitable fillers may alsobe included, such as powdered SiO₂. In some embodiments, a surface (orupper surface) 21 u of the device 21 may be exposed from the packagebody 30, and a surface (or upper surface) 22 u of the device 22 may beexposed from the package body 30. That is, the surface 21 u of thedevice 21 and the surface 22 u of the device 22 may be substantiallyfree from covering of the package body 30. The surface 21 u of thedevice 21 may be substantially coplanar with the surface 22 u of thedevice 22 and a surface (or upper surface) 30 u of the package body 30.In some embodiments, the surface 21 u of the device 21, the surface 22 uof the device 22 and the surface 30 u of the package body 30 may be atdifferent elevations.

The conductive structure 40 r may be disposed on the lower surfaces ofthe package body 30, device 21 and the device 22. The conductivestructure 40 r may be configured to electrically connect the electricalconnectors 41 and 42 to the devices 21 and 22, respectively. Theconductive structure 40 r may include, for example, a redistributionstructure, which may include dielectric layer(s), patterned conductivelayer(s), and conductive via(s).

The electrical connectors 41 may be disposed between the device 21 andthe substrate 10. The electrical connectors 42 may be disposed betweenthe device 22 and the substrate 10. The electrical connectors 43 may bedisposed between the package body 30 and the substrate 10. Theelectrical connectors 41, 42 may joint the conductive element(s) (e.g.,the RDL 10 r) of the substrate 10 and the conductive elements (e.g., thepads) of the devices 21 and 22. The electrical connectors 41, 42 and/or43 may include, for example, solder balls, controlled collapse chipconnection (C4) bumps, micro bumps or other suitable electricalconnectors. The electrical connectors 41, 42 and/or 43 may be formed ofbonding material(s). In some embodiments, the electrical connectors 41,42 and/or 43 may include a conductive bonding material such as copper,aluminum, gold, nickel, silver, palladium, tin, other conductive bondingmaterials or a combination thereof. In some other embodiments, themethod of the present disclosure may be carried out without the presenceof the electrical connectors 41, 42 and/or 43 and a direct bondingbetween the substrate 10 and the device 21 or 22 may be formed. In someother embodiments, the method of the present disclosure may be appliedto direct bonding technique.

In some embodiments, energy-beam(s) is used to provide heat to aninterface between the substrate 10 and the device 21 or 22 for formingbonding joints. For example, in some embodiments, energy-beam(s) is usedto provide heat such that the material of electrical connectors 41, 42and/or 43 may be melted or fused and form the electrical connectors 41,42 and/or 43 after cooling (or annealing). The energy-beam(s) mayirradiate the upper surfaces of the device 21, the device 22 and thepackage body 30 and transmit heat to the interface. In some embodiments,the energy-beam(s) is laser. In some embodiments, a laser assistedbonding (LAB) technique is adopted to provide energy-beam(s) for formingbonding joints.

FIGS. 2A, 2B, 2C and 2D illustrate top views of various stages of amethod for manufacturing a semiconductor package structure according tosome embodiments of the present disclosure. Specifically, FIGS. 2A, 2B,2C and 2D illustrate how to form the electrical connectors 41, 42 and/or43 by irradiating with energy-beam(s). In some embodiments, LABtechnique may be used in the method illustrated in FIGS. 2A, 2B, 2C and2D. In some embodiments, bonding material(s) may be disposed on a lowersurface of the device 21, a lower surface of the device 22 and a lowersurface of the package body 30, respectively, although they are notshowed in FIGS. 2A, 2B, 2C and 2D. The energy-beams used in LAB may be alaser beam. The wavelength, power or power intensity of the energy-beamscan be adjusted depending on the material for forming bonding joints. Insome embodiments, the energy-beams may be laser beams and may have awavelength ranging from about 600 nm to about 1100 nm (e.g., 600 nm, 700nm, 800 nm, 900 nm, 1000 nm or 1100 nm). In some embodiments, thewavelength of the laser beams may be in the range of infrared radiation.

Referring to FIG. 2A, a semiconductor structure 1 may be provided. Thedevice 21 and the device 22 may be arranged side-by-side. In someembodiments, the package body 30 may expose the surface 21 u of thedevice 21 and the surface 22 u of the device 22. In some embodiments, asurface area of the surface 21 u of the device 21 may be different froma surface area of the surface 22 u of the device 22. For example, thesurface area of the surface 21 u of the device 21 may be less than thesurface area of the surface 22 u of the device 22.

In some embodiments, the method of manufacturing a semiconductor packagestructure may include Step I: irradiating the device 21 by anenergy-beam E1. The energy-beam E1 may be used to heat the material forforming bonding joints (e.g., bonding material(s)) disposed on or at thelower surface of the device 21 through irradiating the device 21. Theenergy-beam E1 may cover the surface 21 u of the device 21. In someembodiments, the energy-beam E1 may cover the entire upper surface(e.g., the surface 21u) of the device 21. In some embodiments, theenergy-beam E1 may also heat the material for forming bonding joints(e.g., bonding material(s)) disposed on or at the lower surface of thedevice 22 through irradiating the device 22. In some embodiments, thesurface 22 u of the device 22 has an edge spaced from the firstirradiation area of the first energy-beam. In some embodiments, asmallest distance between an edge of the surface 22 u of the device 22and the first irradiation area (i.e., a peripheral edge of the firstirradiation area) of the first energy-beam is greater than zero. In someembodiments, the energy-beam E1 may cover at least a portion of thesurface 22 u of the device 22, and the covered portion of the surface 22u is irradiated by the energy-beam E1 while the uncovered portion of thesurface 22 u is substantially free from irradiating of the energy-beamE1. In some embodiments, the surface 30 u of the package body 30 may besubstantially free from being irradiated by the energy-beam E1.

The energy-beam E1 may have a first irradiation area on an upper surfaceof the semiconductor structure 1. In this disclosure, the term“irradiation area” may be calculated based on a projection area of theenergy-beam on the upper surface, including the surfaces 21 u, 22 u and30 u, of the semiconductor structure 1. The term “irradiation area” inthis disclosure may also be referred to as “beam size.” In someembodiments, the first irradiation area is greater than the surface areaof the surface 21 u of the device 21. The energy-beam E1 may have afirst power. In some embodiments, the first power may range from about80W to about 200W, such as 80W, 90W, 110W, 130W, 150W, 170W, 190W or200W. The energy-beam E1 may have a first power intensity (i.e., powerper unit area). In some embodiments, the first power intensity may rangefrom about 0.6 W/mm² to about 1.6 W/mm², such as 0.6 W/mm², 0.8 W/mm²,1.0 W/mm², 1.2 W/mm², 1.4 W/mm² or 1.6 W/mm². The emission time of theenergy-beam E1 may range from about 450 ms to about 1200 ms, such as 450ms, 600 ms, 800 ms, 1000 ms or 1200 ms. The emission time of theenergy-beam E1 may be adjusted depending on the selected power or powerintensity of E1. In some embodiments, in Step I, the material forforming bonding joints disposed on or at the lower surface of the device21 may be melted or partially melted to form a joint structure (i.e.,the electrical connectors 41 as shown in FIG. 1).

Referring to FIG. 2B, the method of manufacturing a semiconductorpackage structure may include Step II: irradiating the device 21 and thedevice 22 by an energy-beam E2. The energy-beam E2 may be used to heatthe material for forming bonding joints (e.g., bonding material(s))disposed on or at the lower surface of the device 22 through irradiatingthe device 22. The energy-beam E2 may cover the surface 21 u of thedevice 21 and the surface 22 u of the device 22. In some embodiments,the energy-beam E2 may cover the entire upper surface (e.g., the surface22 u) of the device 22 and the entire upper surface (e.g., the surface21 u) of the device 21. In some embodiments, the energy-beam E2 maycover at least a portion of the surface 30 u of the package body 30, andthe covered portion of the surface 30 u is irradiated by the energy-beamE2 while the uncovered portion of the surface 30 u is substantially freefrom irradiating of the energy-beam E2.

The energy-beam E2 may have a second irradiation area on the uppersurface of the semiconductor structure 1. In some embodiments, thesecond irradiation area of the energy-beam E2 may be greater than thefirst irradiation area of the energy-beam E1. In some embodiments, thesecond irradiation area of the energy-beam E2 may be greater than a sumof the surface area of the surface 21 u of the device 21 and the surfacearea of the surface 22 u of the device 22. The energy-beam E2 may have asecond power. In some embodiments, the second power may be less thanfirst power. In some embodiments, the second power may range from about60W to about 150W, such as 60W, 80W, 100W, 120W, 140W or 150W. Theenergy-beam E2 may have a second power intensity. In some embodiments,the second power intensity may be less than the first power intensity.In some embodiments, the second power intensity may range from about0.40 W/mm² to about 1.2 W/mm², such as 0.40 W/mm², 0.60 W/mm², 0.80W/mm², 1.0 W/mm² or 1.2 W/mm². In some embodiments, the emission time ofthe energy-beam E2 may be greater than the emission time of theenergy-beam E1. In some embodiments, the emission time of theenergy-beam E2 may range from about 600 ms to about 1800 ms, such as 600ms, 800 ms, 1000ms, 1200 ms, 1400 ms 1600 ms or 1800 ms. The emissiontime of the energy-beam E2 may be adjusted depending on the selectedpower or power intensity of E2.

The semiconductor structure 1 may receive a first energy per unit ofirradiated area from the energy-beam E1 in Step I and a second energyper unit of irradiated area from the energy-beam E2 in Step II. In someembodiments, the second energy per unit of irradiated area may be closeto or substantially the same as the first energy per unit of irradiatedarea. In some embodiments, the second energy per unit of irradiated areamay range from about 0.6 times to 1.5 times of the first energy per unitof irradiated area, such as 0.6 times, 0.8 times, 0.9 times, 1.0 time,1.1 times, 1.2 times, 1.3 times or 1.5 times of the first energy perunit of irradiated area. In this disclosure, the energy per unit ofirradiated area may refer to a total energy that the unit area of thesemiconductor structure 1 receives upon irradiated by the energy-beam ina specified step and the energy per unit of irradiated area may also bereferred to as “energy density.” The energy per unit of irradiated areamay satisfy the following equation: power*emission time/(a total of theirradiated area). In some embodiments, in Step II, the material(s) forforming bonding joints disposed on or at the lower surface of the device22 may be melted or partially melted to form a joint structure (i.e.,the electrical connectors 42 as shown in FIG. 1).

Referring to FIG. 2C, the method of manufacturing a semiconductorpackage structure may include Step III: irradiating the device 21, thedevice 22 and the package body 30 by an energy-beam E3. The energy-beamE3 may be used to heat the material for forming bonding joints (e.g.,bonding material(s)) disposed on or at the lower surface of the packagebody 30 through irradiating the package body 30. In some embodiments,the third energy-beam may cover an entire upper surface of thesemiconductor structure. The energy-beam E3 may cover the surface 30 uof the package body 30, the surface 21 u of the device 21 and thesurface 22 u of the device 22. In some embodiments, the surface 30 u ofthe package body 30, the surface 22 u of the device 22 and the surface21 u of the device 21 may be completely covered by the energy-beam E3.

The energy-beam E3 may have a third irradiation area on the uppersurface of the semiconductor structure 1. In some embodiments, the thirdirradiation area of the energy-beam E3 may be greater than the secondirradiation area of the energy-beam E2. In some embodiments, the thirdirradiation area of the energy-beam E3 may be substantially equal to orslightly greater than a sum of the surface area of the surface 21 u ofthe device 21, the surface area of the surface 22 u of the device 22 andthe surface area surface 30 u of the package body 30. The energy-beam E3may have a third power. In some embodiments, the third power may begreater than the second power. In some embodiments, the third power maybe substantially the same as or less than the first power. In someembodiments, the third power may be greater than the second power andsubstantially the same as or less than the first power. In someembodiments, the third power may range from about 80W to about 200W,such as 80, 90W, 110W, 130W, 150W, 170W, 190W or 200W. The energy-beamE3 may have a third power intensity. In some embodiments, the thirdpower intensity may be less than the first power intensity. In someembodiments, the third power intensity may be less than the second powerintensity. In some embodiments, the third power intensity may be lessthan the first power intensity and less than the second power intensity.In some embodiments, the third power intensity may range from about 0.20W/mm² to about 0.50 W/mm², such as 0.20 W/mm², 0.25 W/mm², 0.30 W/mm²,0.35 W/mm², 0.40 W/mm², 0.45 W/mm² or 0.50 W/mm². In some embodiments,the emission time of the energy-beam E3 may be greater than the emissiontime of the energy-beam E2. In some embodiments, the emission time ofthe energy-beam E3 may be greater than the emission time of theenergy-beam E1. In some embodiments, the emission time of theenergy-beam E3 may be greater than the emission time of the energy-beamE2 and the emission time of the energy-beam E1. In some embodiments, theemission time of the energy-beam E3 may range from about 1500 ms toabout 3800 ms, such as 1500 ms, 2000 ms, 2500 ms, 3000 ms, 3500 ms or3800 ms. The emission time of the energy-beam E3 may be adjusteddepending on the selected power or power intensity of E3.

The semiconductor structure 1 may receive a third energy per unit ofirradiated area from the energy-beam E3 in Step III. In someembodiments, the third energy per unit of irradiated area may be closeto or substantially the same as the first energy per unit of irradiatedarea or the second energy per unit of irradiated area. In someembodiments, the third energy per unit of irradiated area may range fromabout 0.6 times to 1.5 times of the first energy per unit of irradiatedarea or the second energy per unit of irradiated area, such as 0.6times, 0.8 times, 0.9 times, 1.0 time, 1.1 times, 1.2 times, 1.3 timesor 1.5 times of the first energy per unit of irradiated area or thesecond energy per unit of irradiated area. In some embodiments, in StepIII, the material(s) for forming bonding joints disposed on or at thelower surface of the package body 30 may be melted or partially meltedto form a joint structure (i.e., the electrical connectors 43 shown inFIG. 1).

Referring to FIG. 2D, the method of manufacturing a semiconductorpackage structure may include Step IV: irradiating the device 21, thedevice 22 and the package body 30 by an energy-beam E4. The energy-beamE4 may have a fourth irradiation area on the upper surface of thesemiconductor structure 1. In some embodiments, the fourth irradiationarea of the energy-beam E4 may be substantially equal to the thirdirradiation area of the energy-beam E3. The energy-beam E4 may have afourth power. In some embodiments, the fourth power may be less than thethird power. In some embodiments, the fourth power may range from about60W to about 150W, such as 60W, 80W, 100W, 120W, 140W or 150W. Theenergy-beam E4 may have a fourth power intensity. In some embodiments,the fourth power intensity may be less than the third power intensity.In some embodiments, the emission time of the energy-beam E4 may rangefrom about 300 ms to about 700 ms, such as 300 ms, 400 ms, 500 ms, 600ms, or 800 ms.

In some embodiments, Steps I-IV uses energy-beams with differentirradiation areas, power intensities and emission times to cover thedevice 21, the device 22 and/or the package body 30. The device 21, thedevice 22 and the package body 30 may have different thermalconductivities and specific heats, and therefore, their temperature mayincrease at different velocities when irradiated by the energy-beam(s).For example, when an energy-beam irradiates on the device 21 and on thepackage body 30, the temperature of the package body 30 may increasefaster than the temperature of the device 21, and therefore the packagebody 30 may be prone to being damaged due to overheating. In theembodiments of the present disclosure, the irradiation areas, powers,power intensities and emission times are controlled such that thebonding joints between the substrate 10 and the device 21 and 22 and thebonding joints between the substrate 10 and the package body 30 can beformed without making the temperatures of the device 21, the device 22and the package body 30 become too high.

FIG. 3 is the simulation result of temperatures of the device 21 and thepackage body 30 in each step shown in FIGS. 2A, 2B, 2C and 2D. Line 20 cmay mean the temperature of the device 21 versus emission time of energybeams, and line 30 c may mean the temperature of the package body 30versus emission time of energy beams. The irradiation areas of theenergy-beam E1, energy-beam E2, energy-beam E3 and energy-beam E4 are121 mm², 156 mm², 400 mm², and 400 mm², respectively. The emission timesof the energy-beam E1, energy-beam E2, energy-beam E3 and energy-beam E4are 800 ms, 1200 ms, 2500 ms, and 500 ms, respectively. The powers ofthe energy-beam E1, energy-beam E2, energy-beam E3 and energy-beam E4are 130 W, 100 W, 130 W, and 100 W, respectively.

In Step I, the energy-beam E1 irradiates the entire upper surface of thedevice 21 and a portion of the upper surface of the device 22, but doesnot irradiate the upper surface of the package body 30. The surface areaof the upper surface of the device 21 is less than the surface area ofthe upper surface of the device 22. The sum of the irradiated surfacesof the devices 21 and 22 are as large as possible. The bulk material ofthe devices 21 and 22 may include silicon and the bulk material for thepackage body 30 may include an epoxy-based molding compound. Since thepackage body 30 is substantially free from being irradiated by theenergy-beam E1, an energy-beam with greater power intensity and lessemission time may be used. In Step I, the temperature of the device 21increases faster than the temperature of the package body 30.

In Step II, the energy-beam E2 is used to irradiate the entire uppersurfaces of the device 21 and device 22 with an irradiation area greaterthan that of the energy-beam E1. Further, a portion of the package body30 is also irradiated by the energy-beam E2. The irradiated portion ofthe package body 30 may surround the device 21 as illustrated in FIG.2B. In order to prevent the package body 30 from being overheated, thepower intensity of the energy-beam E2 may be less than that of theenergy-beam E1. Further, the emission time of the energy-beam E2 may begreater than that of the energy-beam E1 so that the energy per unit ofirradiated area of Steps I and II may be close to each other or only ina relatively small difference. In Step II, the temperature of the device21 may have a slightly change, and the temperature of the package body30 may increase at a velocity substantially the same as that in Step I.During Steps I and II, energy can be transmitted to the interfacebetween the substrate 10 and the device 21 and the interface between thesubstrate 10 and the device 22 where bonding joints are intended to beformed.

In Step III, since bonding joints can also be formed at the interfacebetween the substrate 10 and the package body 30, the energy-beam E3having an irradiation area greater than that of the energy-beam E2 isused to irradiate the entire upper surfaces of the device 21, device 22and package body 30. In order to prevent the package body 30 from beingoverheated, the power intensity of the energy-beam E3 may be less thanthat of the energy-beam E1, or even less than that of the energy-beamE2. Further, the emission time of the energy-beam E3 may be greater thanthat of the energy-beam E2 so that the energy per unit of irradiatedarea of Step III may be close to the energy per unit of irradiated areaof Step II (and or Step I) or only in a relatively small difference withthe energy per unit of irradiated area of Step II (and or Step I). InStep III, the temperature of the device 21 may be substantiallyunchanged, and the temperature of the package body 30 may increasesharply and exceed than that of the device 21. During Step III, energycan be transmitted to the interface between the substrate 10 and thedevice 21, the interface between the substrate 10 and the device 22 andthe interface between the substrate 10 and the package body 30 wherebonding joints are intended to be formed.

During Steps I, II and III, the material for forming the bonding jointslocated at the interfaces may absorb sufficient energy so that they canbe melted or partially melted to form the bonding joints. Furthermore,when sufficient energy is transmitted to the material for forming thebonding joints located at the interfaces, an energy-beam with a smallerpower can be used in the subsequent step (i.e., Step IV) before turningoff the equipment for supplying energy beams, thereby problems due tosudden power change can be avoided. In some embodiments, an energy-beamwith a smaller power should be used to replace the energy-beam E3 beforethe package body 30 reaches its critical point at which the package body30 may be damaged due to overheat. In some embodiments, an energy-beamwith a smaller power is used to replace the energy-beam E3 when thepackage body 30 reaches a temperature of 450° C. or below.

As discussed above, in Step IV, the energy-beam E4 may be used withrelatively small power to prevent the energy-beam source from damage dueto suddenly turning off the energy-beam source. In Step IV, thetemperature of the device 21 may be substantially unchanged, and thetemperature of the package body 30 may decrease.

In a comparative example, a first energy-beam and a second energy-beamare used to irradiate the devices 21 and 22 and the package body30. Thefirst energy-beam and the second energy-beam have the same irradiationarea and irradiate the entire upper surfaces of the devices 21 and 22and the package body 30. The first energy-beam has a power of 100W andthe emission time is 4000 ms. The second energy having a higher power(e.g., 150W) is used to ensure that each of the bonding joints can besuccessfully formed, and the emission time is decreased to 1000 ms.Since the package body is irradiated by both of the first energy-beamand the second first energy-beam, the temperature of the package bodymay reach a relatively high temperature (e.g., 450° C.) quickly. As aresult, the package body may be damaged. As compared to the comparativeexample, in the embodiments according to the present disclosure, thetemperature of the package body 30 may be controlled to be less than450° C. in each step, and the package body 30 may keep at a temperaturemore than 400° C. with a shorter time (e.g., 2000 ms or less).Therefore, sufficient heat can be applied to the interface between thesubstrate 10 and the devices 21 and 22 and the interface between thesubstrate 10 and the package body 30, but the package body 30 can befree from being overheated, thereby the reliability of the semiconductorpackage structure can be improved.

FIG. 4 illustrates a cross-sectional view of an example of asemiconductor structure 2 according to some embodiments of the presentdisclosure.

In some embodiments, the semiconductor structure 2 may include asubstrate 10, a device 51, device(s) 52, electrical connectors 61 andelectrical connector(s) 62.

The device 51 may be disposed on the substrate 10. The device 51 mayinclude an active device. The device 51 may be the same as the device 21or the same as a combination of the devices 21 and 22. The device(s) 52may be disposed on the substrate 10. The device(s) 52 may includepassive device(s), such as capacitor(s), resistor(s), inductor(s) orother passive device(s). In some embodiments, the device 52 may beseparated from the device 51.

The electrical connectors 61 may be disposed between the device 51 andthe substrate 10. The electrical connectors 61 may joint the conductiveelement(s) (e.g., the RDL, not shown) of the substrate 10 and theconductive elements (e.g., the pads) of the device 51. The electricalconnector 61 may include, for example, solder balls, controlled collapsechip connection (C4) bumps, micro bumps, or other electrical connectors.The electrical connector 62 may be disposed between the device 52 andthe substrate 10. The electrical connector 62 may joint the conductiveelement(s) (e.g., the RDL, not shown) of the substrate 10 and theconductive elements (e.g., the electrical contacts) of the device 52.The electrical connector 62 may be formed of bonding material(s). Insome embodiments, the electrical connector 62 may include, for example,solder paste or other suitable materials. In some other embodiments, themethod of the present disclosure may be carried out without the presenceof the electrical connectors 61 and/or 62. In some other embodiments,the method of the present disclosure may be applied to direct bondingtechnique.

In some embodiments, energy-beam(s) is used to provide heat to aninterface between the substrate 10 and the device 51 or 52 for formingbonding joints. For example, in some embodiments, energy-beam(s) is usedto provide heat such that the material of electrical connector 61 and/orthe electrical connector 62 may be melted or fused and form theelectrical connectors 61 and/or electrical connector(s) 62 after cooling(or annealing). The energy-beam(s) may irradiate the upper surfaces ofthe device 51 and the device 52 and pass through the device 51 and thedevice 52 to provide heat to the interface. In some embodiments, theenergy-beam(s) is laser. In some embodiments, a laser assisted bonding(LAB) technique is adopted to provide energy-beam(s) for forming bondingjoints.

FIGS. 5A, 5B and 5C illustrate top views of various stages of a methodfor manufacturing a semiconductor package structure according to someembodiments of the present disclosure, and FIGS. 6A, 6B and 6Cillustrate cross-sectional views of the method corresponding to FIGS.5A, 5B and 5C, respectively.

Referring to FIGS. 5A and 6A, a semiconductor structure 2 may beprovided. The device 51 and the device(s) 52 may be separated from eachother. In some embodiments, the device 51 may be disposed at a centerregion of an upper surface of the substrate 10 and the device 52 may bedisposed at a peripheral region of an upper surface of the substrate 10.In some embodiments, a surface area of the surface 51 u of the device 51may be different from a surface area of the surface 52 u of the device52. For example, the surface area of the surface 51 u of the device 51may be greater than or exceeding the surface area of the surface 52 u ofthe device 52. Bonding material(s) 61 a may be disposed between thedevice 51 and the substrate 10. Bonding material(s) 62 a may be disposedbetween the device 52 and the substrate 10.

Referring to FIGS. 5B and 6B, the method of manufacturing asemiconductor package structure may include Step I: heating the device51 by an energy-beam E5. The energy-beam E5 may be used to heat thematerial for forming bonding joints (e.g., the bonding material 61 a)disposed on or at the lower surface of the device 51 through irradiatingthe device 51. The energy-beam E5 may cover the surface 51 u of thedevice 51. In some embodiments, the energy-beam E5 may cover the entireupper surface (e.g., the surface 51 u) of the device 51. In someembodiments, the device 52 may be substantively free from beingirradiated by the energy-beam E5. In some embodiments, the surface 52 uof the device 52 has an edge spaced from the first irradiation area ofthe energy-beam E5. In some embodiments, a smallest distance between anedge of the surface 52 u of the device 52 and the irradiation area(i.e., a peripheral edge of the irradiation area) of the energy-beam E5is greater than zero. In some embodiments, the bonding material 61 abecomes bonding material 61 b after performing the Step I. In someembodiments, the bonding material 61 a absorbs a portion of energynecessary for forming electrical connectors 61 during Step I.

Referring to FIGS. 5C and 6C, the method of manufacturing asemiconductor package structure may include Step II: heating the device51 and the device 52 by an energy-beam E6. The energy-beam E6 may beused to heat the material for forming bonding joints (e.g., the bondingmaterial 61 b and the bonding material 62 a) disposed on or at the lowersurfaces of the device 51 and the device 52 through irradiating thedevice 51 and the device 52. The energy-beam E6 may cover the surface 51u of the device 51 and the surface 52 u of the device 52. In someembodiments, the energy-beam E6 may cover the entire upper surface(e.g., the surface 51 u) of the device 51 and the entire upper surface(e.g., the surface 52 u) of the device 52. In some embodiments, thebonding material(s) 61 b becomes the electrical connectors 61, and thebonding material(s) 62 a becomes the electrical connector(s) 62 duringor after performing Step II. That is, the bonding material 61 b and thebonding material 62 a may absorb sufficient energy for formingelectrical connectors 61 and 62 during or after Step II. In someembodiments, the irradiation area of the energy-beam E6 may be greaterthan the irradiation area of the energy-beam E5. In some embodiments,the power of the energy-beam E6 may be greater than the power of theenergy-beam E5. In some embodiments, the power of the energy-beam E6 mayrange from about 1.2 times to about 1.6 times of the power of theenergy-beam E5, such as 1.2 times, 1.3 times, 1.4 times, 1.5 times or1.6 times. In some embodiments, the emission time of the energy-beam E6may be less than the emission time of the energy-beam E5. In someembodiments, the emission time of the energy-beam E6 may range fromabout 0.3 times to about 0.8 times of the emission time of theenergy-beam E5, such as 0.3 times, 0.4 times, 0.5 times, 0.6 times, 0.7times or 0.8 times. In some embodiments, the energy density of theenergy-beam E6 may range from about 0.6 times to about 1.5 times of theenergy density of the energy-beam E5, such as 0.6 times, 0.7 times, 0.8times, 0.9 times, 1.0 time, 1.1 times, 1.2 times, 1.3 times or 1.5times.

Since the device 51 is separated from the device 52, the heat cannot betransmitted directly between the device 51 and the device 52. Therefore,the amount of heat received by the device 51 is substantiallyindependent from the amount of heat received by the device 52. In someembodiment, the thermal budget for forming a joint structure at theinterface between the substrate 10 and the device 51 (e.g., formingelectrical connectors 61 from the bonding material 61 a) is greater thanthe thermal budget for forming a joint structure at the interfacebetween the substrate 10 and the device 52 (e.g., forming electricalconnectors 62 from the bonding material 62 a). In such embodiments, theenergy beams can be designed so that the interface between the substrate10 and the device 51 receives energy in both of Step I and Step II, theinterface between the substrate 10 and the device 52 receives energy inStep II, and the total energy received at each of the interfaces meetsthe thermal budget for forming the joint structure.

It is contemplated that the sequence between Step I and Step II can beexchanged. In some embodiments, Step I may be performed after Step II.In some embodiments, Step II may be performed after Step I. In someembodiments, in a step where a greater irradiation area is used, asmaller power of the energy-beam may be adopted such that the energy perunit of irradiated area in Step I may be close to or substantially thesame as the energy per unit of irradiated area in Step II.

In a comparative example where the joint structure between the substrate10 and the device 51 is formed during or after Step I but before StepII, an energy-beam with a greater power is needed since the formation ofthe joint structure between the substrate 10 and the device 51 requiresa relatively great thermal budget. Such a relatively great power of theenergy-beam may damage the substrate, and therefore the reliability ofthe semiconductor package structure may be damaged. In anothercomparative example, in a first step the device 52 and a mask isdisposed on the substrate 10; in a second step, an energy beamirradiates the upper surface of the device 52 and the upper surface ofthe mask, the energy beam supplies energy for forming a joint structurebetween the substrate 10 and the device 52, and the mask protects theunderlying substrate from being damaged by the energy-beam; in a thirdstep, the mask is removed and the device 51 is disposed on the substrate10 at a position that was covered and protected by the mask in thesecond step; in a fourth step, an energy beam irradiates the uppersurface of the device 51 and supplies energy for forming a jointstructure between the substrate 10 and the device 51. Although in thiscomparative embodiment, the energies supplied for forming the jointstructure between the substrate 10 and the device 51 and for forming thejoint structure between the substrate 10 and the device 52 can be easilycontrolled, the formation and removal of the mask increases themanufacturing time and the complexity of the manufacturing process. Incomparison with comparative examples, the material for formingelectrical connectors 61 absorbs energy in two steps with two differentenergy-beams. Therefore, the energy-beam used in Step I may have arelatively small power so that the damage of the substrate 10 can beprevented. Further, in Step II the material for forming electricalconnectors 61 continue absorbing energy and the material for forming theelectrical connector 62 starts to absorb energy. Thus, the electricalconnectors 61 and 62 can be formed after Step II and the sum of emissiontimes as well as the sum of energy of the energy beams E5 and E6 in StepI and Step II may be less than those of the comparative example. As aresult, the manufacturing time can be reduced and a simple manufacturingmethod can be achieved.

Spatial descriptions, such as “above,” “below,” “up,” “left,” “right,”“down,” “top,” “bottom,” “vertical,” “horizontal,” “side,” “higher,”“lower,” “upper,” “over,” “under,” and so forth, are indicated withrespect to the orientation shown in the figures unless otherwisespecified. It should be understood that the spatial descriptions usedherein are for purposes of illustration only, and that practicalimplementations of the structures described herein can be spatiallyarranged in any orientation or manner, provided that the merits ofembodiments of this disclosure are not deviated from by such anarrangement.

As used herein, the terms “approximately,” “substantially,”“substantial” and “about” are used to describe and account for smallvariations. When used in conjunction with an event or circumstance, theterms can refer to instances in which the event or circumstance occursprecisely as well as instances in which the event or circumstance occursto a close approximation. For example, when used in conjunction with anumerical value, the terms can refer to a range of variation less thanor equal to ±10% of that numerical value, such as less than or equal to±5%, less than or equal to ±4%, less than or equal to ±3%, less than orequal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%,less than or equal to ±0.1%, or less than or equal to ±0.05%. Forexample, two numerical values can be deemed to be “substantially” thesame or equal if a difference between the values is less than or equalto ±10% of an average of the values, such as less than or equal to ±5%,less than or equal to ±4%, less than or equal to ±3%, less than or equalto ±2%, less than or equal to ±1%, less than or equal to ±0.5%, lessthan or equal to ±0.1%, or less than or equal to ±0.05%.

Two surfaces can be deemed to be coplanar or substantially coplanar if adisplacement between the two surfaces is no greater than 5 μm, nogreater than 2 μm, no greater than 1 μm, or no greater than 0.5 μm.

As used herein, the singular terms “a,” “an,” and “the” may includeplural referents unless the context clearly dictates otherwise.

As used herein, the terms “conductive,” “electrically conductive” and“electrical conductivity” refer to an ability to transport an electriccurrent. Electrically conductive materials typically indicate thosematerials that exhibit little or no opposition to the flow of anelectric current. One measure of electrical conductivity is Siemens permeter (S/m). Typically, an electrically conductive material is onehaving a conductivity greater than approximately 10⁴ S/m, such as atleast 10⁵ S/m or at least 10⁶ S/m. The electrical conductivity of amaterial can sometimes vary with temperature. Unless otherwisespecified, the electrical conductivity of a material is measured at roomtemperature.

Additionally, amounts, ratios, and other numerical values are sometimespresented herein in a range format. It is to be understood that suchrange format is used for convenience and brevity and should beunderstood flexibly to include numerical values explicitly specified aslimits of a range, but also to include all individual numerical valuesor sub-ranges encompassed within that range as if each numerical valueand sub-range is explicitly specified.

While the present disclosure has been described and illustrated withreference to specific embodiments thereof, these descriptions andillustrations are not limiting. It should be understood by those skilledin the art that various changes may be made and equivalents may besubstituted without departing from the true spirit and scope of thepresent disclosure as defined by the appended claims. The illustrationsmay not be necessarily drawn to scale. There may be distinctions betweenthe artistic renditions in the present disclosure and the actualapparatus due to manufacturing processes and tolerances. There may beother embodiments of the present disclosure which are not specificallyillustrated. The specification and drawings are to be regarded asillustrative rather than restrictive. Modifications may be made to adapta particular situation, material, composition of matter, method, orprocess to the objective, spirit and scope of the present disclosure.All such modifications are intended to be within the scope of the claimsappended hereto. While the methods disclosed herein have been describedwith reference to particular operations performed in a particular order,it will be understood that these operations may be combined,sub-divided, or re-ordered to form an equivalent method withoutdeparting from the teachings of the present disclosure. Accordingly,unless specifically indicated herein, the order and grouping of theoperations are not limitations of the present disclosure.

What is claimed is:
 1. A method for manufacturing a semiconductorpackage structure, comprising: (a) providing a semiconductor structurecomprising a first device and a second device; (b) irradiating the firstdevice by a first energy-beam with a first irradiation area; and (c)irradiating the first device and the second device by a secondenergy-beam with a second irradiation area greater than the firstirradiation area of the first energy-beam.
 2. The method of claim 1,wherein the semiconductor structure further comprises a package bodysurrounding the first device and the second device, wherein in step, thepackage body is substantially free from being irradiated by the firstenergy-beam.
 3. The method of claim 2, wherein the first energy-beamcovers an upper surface of the first device and the second energy-beamcovers an upper surface of the first device and an upper surface of thesecond device.
 4. The method of claim 3, wherein a surface area of theupper surface of the first device is smaller than a surface area of theupper surface of the second device.
 5. The method of claim 2, whereinthe first energy-beam further covers at least a portion of an uppersurface of the second device.
 6. The method of claim 2, wherein thefirst energy-beam has a first power and the second energy-beam has asecond power less than the first power of the first energy-beam.
 7. Themethod of claim 6, wherein the first energy-beam has a first powerintensity and the second energy-beam has a second power intensity lessthan the first power intensity of the first energy-beam.
 8. The methodof claim 7, wherein the second energy-beam further covers at least aportion of the package body.
 9. The method of claim 2, wherein afterstep (c), the method further comprises: (d) irradiating the firstdevice, the second device and the package body by a third energy-beamwith a third irradiation area greater than the second irradiation areaof the second energy-beam.
 10. The method of claim 9, wherein the secondenergy-beam has a second power and the third energy-beam has a thirdpower greater than the second power of the second energy-beam.
 11. Themethod of claim 10, wherein the second energy-beam has a second powerintensity and the third energy-beam has a third power intensity lessthan the second power intensity.
 12. The method of claim 9, whereinafter step (d), the method further comprises: (e) irradiating the firstdevice, the second device and the package body by a fourth energy-beam,and a power intensity of the fourth energy-beam is less than a powerintensity of the third energy-beam.
 13. The method of claim 2, whereinthe first irradiation area is greater than a surface area of an uppersurface of the first device.
 14. The method of claim 2, wherein thesecond irradiation area is greater than a sum of a surface area of anupper surface of the first device and a surface area of an upper surfaceof the second device.
 15. The method of claim 1, wherein the firstenergy-beam covers an upper surface of the first device and the secondenergy-beam covers an upper surface of the first device and an uppersurface of the second device, and wherein the upper surface of thesecond device has an edge spaced from the first irradiation area of thefirst energy-beam.
 16. The method of claim 15, wherein the firstenergy-beam has a first power and the second energy-beam has a secondpower greater than the first power of the first energy-beam.
 17. Amethod for manufacturing a semiconductor package structure, comprising:(a) providing a substrate, a first device and a second device, whereinthe first device and the second device are disposed on the substrate;(b) heating the first device by a first energy-beam with a first power;and (c) heating the first device and the second device by a secondenergy-beam with a second power, wherein the second power is greaterthan the first power.
 18. The method of claim 17, wherein a firstthermal budget for forming a joint structure between the first deviceand the substrate is greater than a second thermal budget for forming ajoint structure between the first device and the substrate.
 19. Themethod of claim 17, wherein in step (b), the second device issubstantially free from being irradiated by the first energy-beam. 20.The method of claim 17, wherein the device is an active device and thesecond device is a passive device.